
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance.
from Pocket https://www.st.com/content/st_com/en/products/power-transistors/wide-bandgap-transistors/sic-mosfets/scth90n65g2v-7.html
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